onsemi-Single FETs, MOSFETs-NTTFS4985NFTWG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);13.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.69W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);64A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;2.075nF


30V 3.5mΩ@10V 1 N-channel 2.69W WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);13.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.69W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);64A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);13.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.69W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);64A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;2.075nF


    30V 3.5mΩ@10V 1 N-channel 2.69W WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS

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