onsemi-Single FETs, MOSFETs-NTTFS4C25NTAG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);10.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;20.2W/RDS(on);26.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;500pF


30V 26.5mΩ@4.5V 1 N-channel 20.2W WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);10.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;20.2W/RDS(on);26.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);10.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;20.2W/RDS(on);26.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;500pF


    30V 26.5mΩ@4.5V 1 N-channel 20.2W WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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