onsemi-Single FETs, MOSFETs-NTTFSC4937NTAG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);15.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;43.1W/RDS(on);3.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;2.54nF


30V 3.4mΩ@10V 1 N-channel 43.1W WDFN-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);15.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;43.1W/RDS(on);3.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);15.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;43.1W/RDS(on);3.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;2.54nF


    30V 3.4mΩ@10V 1 N-channel 43.1W WDFN-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS

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