onsemi-Single FETs, MOSFETs-NVD3055L170T4G-VF01

Description

Drain to Source Voltage;60V/Gate Charge(Qg);10nC@5V/Number;1 N-channel/Pd - Power Dissipation;28.5W/RDS(on);170mΩ@5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;275pF


N-Channel 60V 9A 28.5W Surface Mount TO-252(DPAK)

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);10nC@5V/Number;1 N-channel/Pd - Power Dissipation;28.5W/RDS(on);170mΩ@5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);10nC@5V/Number;1 N-channel/Pd - Power Dissipation;28.5W/RDS(on);170mΩ@5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;275pF


    N-Channel 60V 9A 28.5W Surface Mount TO-252(DPAK)

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