onsemi-Single FETs, MOSFETs-NVD4808NT4G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54.6W/RDS(on);12.4mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.538nF/Output Capacitance(Coss);334pF


30V 12.4mΩ@4.5V 1 N-channel 54.6W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54.6W/RDS(on);12.4mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.538nF/Output Capacitance(Coss);334pF30V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54.6W/RDS(on);12.4mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.538nF/Output Capacitance(Coss);334pF


    30V 12.4mΩ@4.5V 1 N-channel 54.6W DPAK Single FETs, MOSFETs RoHS

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