onsemi-Single FETs, MOSFETs-NVD4810NT4G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);15.7mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);54A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.35nF/Output Capacitance(Coss);330pF


30V 15.7mΩ@4.5V 1 N-channel 50W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);15.7mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);54A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);21nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);15.7mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);54A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.35nF/Output Capacitance(Coss);330pF


    30V 15.7mΩ@4.5V 1 N-channel 50W DPAK Single FETs, MOSFETs RoHS

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