onsemi-Single FETs, MOSFETs-NVD6416ANLT4G-VF01

Description

Drain to Source Voltage;100V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;71W/RDS(on);74mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1nF


N-Channel 100V 19A 71W Surface Mount TO-252(DPAK)

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;71W/RDS(on);74mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;71W/RDS(on);74mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1nF


    N-Channel 100V 19A 71W Surface Mount TO-252(DPAK)

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