onsemi-Single FETs, MOSFETs-NVJS4405NT1G

Description

Drain to Source Voltage;25V/Gate Charge(Qg);1.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;630mW/RDS(on);249mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;60pF


25V 249mΩ@4.5V 1 N-channel 630mW SC-88-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;25V/Gate Charge(Qg);1.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;630mW/RDS(on);249mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;25V/Gate Charge(Qg);1.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;630mW/RDS(on);249mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;60pF


    25V 249mΩ@4.5V 1 N-channel 630mW SC-88-6 Single FETs, MOSFETs RoHS

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