onsemi-Single FETs, MOSFETs-NVMFD5489NLWFT1G

Description

Drain to Source Voltage;60V/Gate Charge(Qg);12.4nC@10V/Number;2 N-Channel/Pd - Power Dissipation;23.4W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;330pF


60V 52mΩ@10V 2 N-Channel 23.4W DFN-8(4.9x5.9) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);12.4nC@10V/Number;2 N-Channel/Pd - Power Dissipation;23.4W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);12.4nC@10V/Number;2 N-Channel/Pd - Power Dissipation;23.4W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;330pF


    60V 52mΩ@10V 2 N-Channel 23.4W DFN-8(4.9x5.9) Single FETs, MOSFETs RoHS

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