onsemi-Single FETs, MOSFETs-NVMYS013N08LHTWG

Description

Drain to Source Voltage;80V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;27W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;906pF


80V 17mΩ@4.5V 1 N-channel 27W LFPAK-4(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;27W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;27W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;906pF


    80V 17mΩ@4.5V 1 N-channel 27W LFPAK-4(5x6) Single FETs, MOSFETs RoHS

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