onsemi-Single FETs, MOSFETs-NVTFS6H860NTAG

Description

Drain to Source Voltage;80V/Gate Charge(Qg);8.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;46W/RDS(on);17.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;510pF


80V 17.3mΩ@10V 1 N-channel 46W WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);8.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;46W/RDS(on);17.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);8.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;46W/RDS(on);17.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;510pF


    80V 17.3mΩ@10V 1 N-channel 46W WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS

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