onsemi-Single FETs, MOSFETs-NVTFS6H888NWFTAG

Description

Drain to Source Voltage;80V/Gate Charge(Qg);4.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.9W;18W/RDS(on);45.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);4.7A;12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;220pF


80V 45.7mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);4.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.9W;18W/RDS(on);45.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);4.7A;12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;220pF80V 45.7mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);4.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.9W;18W/RDS(on);45.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);4.7A;12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;220pF


    80V 45.7mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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