onsemi-Single FETs, MOSFETs-NVTR4502PT1G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;400mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);1.13A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;200pF/Output Capacitance(Coss);80pF


P-Channel 30V 1.13A 0.4W Surface Mount SOT-23

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;400mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);1.13A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;400mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);1.13A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;200pF/Output Capacitance(Coss);80pF


    P-Channel 30V 1.13A 0.4W Surface Mount SOT-23

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