onsemi-Single FETs, MOSFETs-RFD3055LESM

Description

Drain to Source Voltage;60V/Gate Charge(Qg);11.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;38W/RDS(on);107mΩ@5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pF


60V 107mΩ@5V 1 N-channel 38W TO-252(DPAK) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;60V/Gate Charge(Qg);11.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;38W/RDS(on);107mΩ@5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pF60V 107mΩ@5V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);11.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;38W/RDS(on);107mΩ@5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pF


    60V 107mΩ@5V 1 N-channel 38W TO-252(DPAK) Single FETs, MOSFETs RoHS

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