onsemi-Single FETs, MOSFETs-SCH1430-TL-H

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);310mΩ@1.8V/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;128pF


20V 310mΩ@1.8V 1 N-channel 800mW SCH-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);310mΩ@1.8V/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;128pF20V 310mΩ@1.8V 1 N-channel 800mW... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);310mΩ@1.8V/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;128pF


    20V 310mΩ@1.8V 1 N-channel 800mW SCH-6 Single FETs, MOSFETs RoHS

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