onsemi-Single FETs, MOSFETs-SI3443DV

Description

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);65mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.079nF


20V 65mΩ@4.5V 1 P-Channel 2W TSOP-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);65mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.079nF20V 65mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);65mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.079nF


    20V 65mΩ@4.5V 1 P-Channel 2W TSOP-6 Single FETs, MOSFETs RoHS

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