onsemi-Single FETs, MOSFETs-SI3445DV

Description

Drain to Source Voltage;20V/Gate Charge(Qg);30nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);60mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);185pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.926nF/Output Capacitance(Coss);530pF


20V 60mΩ@1.8V 1 P-Channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);30nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);60mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);185pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);30nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);60mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);185pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.926nF/Output Capacitance(Coss);530pF


    20V 60mΩ@1.8V 1 P-Channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

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