onsemi-Single FETs, MOSFETs-SI3454DV

Description

Drain to Source Voltage;30V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);95mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;460pF


30V 95mΩ@4.5V 1 N-channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);95mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);95mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;460pF


    30V 95mΩ@4.5V 1 N-channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

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