onsemi-Single FETs, MOSFETs-SI3455DV

Description

Drain to Source Voltage;30V/Gate Charge(Qg);5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);125mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;298pF


30V 125mΩ@4.5V 1 P-Channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);125mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);125mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;298pF


    30V 125mΩ@4.5V 1 P-Channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

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