onsemi-Single FETs, MOSFETs-SI3948DV

Description

Drain to Source Voltage;30V/Gate Charge(Qg);3.2nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);145mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;220pF/Output Capacitance(Coss);50pF


30V 145mΩ@4.5V 2 N-Channel 960mW SuperSOT-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);3.2nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);145mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);3.2nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);145mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;220pF/Output Capacitance(Coss);50pF


    30V 145mΩ@4.5V 2 N-Channel 960mW SuperSOT-6 Single FETs, MOSFETs RoHS

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