onsemi-Single FETs, MOSFETs-SI4466DY

Description

Drain to Source Voltage;20V/Gate Charge(Qg);66nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);7.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);310pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;4.7nF


20V 7.5mΩ@4.5V 1 N-channel 50W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);66nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);7.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);310pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);66nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);7.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);310pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;4.7nF


    20V 7.5mΩ@4.5V 1 N-channel 50W SOIC-8 Single FETs, MOSFETs RoHS

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