onsemi-Single FETs, MOSFETs-SI4467DY

Description

Drain to Source Voltage;20V/Gate Charge(Qg);120nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);14mΩ@1.8V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);750pF/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;8.237nF/Output Capacitance(Coss);1.497nF


20V 14mΩ@1.8V 1 P-Channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);120nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);14mΩ@1.8V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);750pF/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$2.91 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);120nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);14mΩ@1.8V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);750pF/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;8.237nF/Output Capacitance(Coss);1.497nF


    20V 14mΩ@1.8V 1 P-Channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

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