onsemi-Single FETs, MOSFETs-SI4822DY

Description

Drain to Source Voltage;30V/Gate Charge(Qg);33nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);255pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.18nF/Output Capacitance(Coss);500pF


30V 13mΩ@4.5V 1 N-channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);33nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);255pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);33nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);255pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.18nF/Output Capacitance(Coss);500pF


    30V 13mΩ@4.5V 1 N-channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

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