onsemi-Single FETs, MOSFETs-SI6463DQ

Description

Drain to Source Voltage;20V/Gate Charge(Qg);41nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);18mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);549pF/Current - Continuous Drain(Id);8.8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;5.045nF/Output Capacitance(Coss);1.035nF


20V 18mΩ@2.5V 1 P-Channel 1.3W TSSOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);41nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);18mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);549pF/Current - Continuous Drain(Id);8.8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);41nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);18mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);549pF/Current - Continuous Drain(Id);8.8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;5.045nF/Output Capacitance(Coss);1.035nF


    20V 18mΩ@2.5V 1 P-Channel 1.3W TSSOP-8 Single FETs, MOSFETs RoHS

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