onsemi-Single FETs, MOSFETs-SI9424DY

Description

Drain to Source Voltage;20V/Gate Charge(Qg);33nC@5V/Number;1 P-Channel/Type;P-Channel/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.26nF


20V 32mΩ@4.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);33nC@5V/Number;1 P-Channel/Type;P-Channel/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.26nF20V 32mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);33nC@5V/Number;1 P-Channel/Type;P-Channel/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.26nF


    20V 32mΩ@4.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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