onsemi-Single FETs, MOSFETs-SI9933BDY

Description

Drain to Source Voltage;20V/Gate Charge(Qg);20nC/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);115mΩ@2.7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);3.4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;825pF


20V 115mΩ@2.7V 2 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);20nC/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);115mΩ@2.7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);3.4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);20nC/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);115mΩ@2.7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);3.4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;825pF


    20V 115mΩ@2.7V 2 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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