onsemi-Single FETs, MOSFETs-SSD2025TF

Description

Drain to Source Voltage;60V/Gate Charge(Qg);30nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1V


60V 100mΩ@10V 2 N-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);30nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1V60V 100mΩ@10V 2 N-Channel... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);30nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1V


    60V 100mΩ@10V 2 N-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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