onsemi-Single FETs, MOSFETs-USB10H

Description

Drain to Source Voltage;20V/Gate Charge(Qg);4.2nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;960mW/RDS(on);250mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);67pF/Current - Continuous Drain(Id);1.9A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;441pF/Output Capacitance(Coss);127pF


20V 250mΩ@2.5V 2 P-Channel 960mW SuperSOT-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);4.2nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;960mW/RDS(on);250mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);67pF/Current - Continuous Drain(Id);1.9A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);4.2nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;960mW/RDS(on);250mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);67pF/Current - Continuous Drain(Id);1.9A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;441pF/Output Capacitance(Coss);127pF


    20V 250mΩ@2.5V 2 P-Channel 960mW SuperSOT-6 Single FETs, MOSFETs RoHS

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