onsemi-Single, Pre-Biased Bipolar Transistors-MUN5141T1G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;310mW/Operating Temperature;-55℃~+150℃/Input Resistor;130kΩ/DC Current Gain;160


160 100mA 310mW 50V SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;310mW/Operating Temperature;-55℃~+150℃/Input Resistor;130kΩ/DC Current Gain;160160 100mA 310mW 50V SC-70-3 Single, Pre-Biased... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;310mW/Operating Temperature;-55℃~+150℃/Input Resistor;130kΩ/DC Current Gain;160


    160 100mA 310mW 50V SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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