onsemi-Single, Pre-Biased Bipolar Transistors-MUN5215T1G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;202mW/Operating Temperature;-55℃~+150℃/Input Resistor;10kΩ/DC Current Gain;350


350 100mA 202mW 50V SOT-323(SC-70) Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;202mW/Operating Temperature;-55℃~+150℃/Input Resistor;10kΩ/DC Current Gain;350350 100mA 202mW 50V SOT-323(SC-70) Single, Pre-Biased... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;202mW/Operating Temperature;-55℃~+150℃/Input Resistor;10kΩ/DC Current Gain;350


    350 100mA 202mW 50V SOT-323(SC-70) Single, Pre-Biased Bipolar Transistors RoHS

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