onsemi-Single, Pre-Biased Bipolar Transistors-MUN5235T1G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;202mW/Operating Temperature;-55℃~+150℃/Input Resistor;2.2kΩ/DC Current Gain;140


140 100mA 202mW 50V SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;202mW/Operating Temperature;-55℃~+150℃/Input Resistor;2.2kΩ/DC Current Gain;140140 100mA 202mW 50V SC-70-3 Single, Pre-Biased... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;202mW/Operating Temperature;-55℃~+150℃/Input Resistor;2.2kΩ/DC Current Gain;140


    140 100mA 202mW 50V SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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