onsemi-Single, Pre-Biased Bipolar Transistors-NSBA113EF3T5G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;254mW/Operating Temperature;-55℃~+150℃/Input Resistor;1.3kΩ/DC Current Gain;3


3 100mA 254mW 50V SOT-1123 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;254mW/Operating Temperature;-55℃~+150℃/Input Resistor;1.3kΩ/DC Current Gain;33 100mA 254mW 50V SOT-1123 Single, Pre-Biased... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;254mW/Operating Temperature;-55℃~+150℃/Input Resistor;1.3kΩ/DC Current Gain;3


    3 100mA 254mW 50V SOT-1123 Single, Pre-Biased Bipolar Transistors RoHS

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