onsemi-Single, Pre-Biased Bipolar Transistors-NSBA114EF3T5G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;254mW/Input Resistor;10kΩ/Resistor Ratio;1/DC Current Gain;35


35 100mA 254mW 50V SOT-1123-3 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;254mW/Input Resistor;10kΩ/Resistor Ratio;1/DC Current Gain;3535 100mA 254mW 50V SOT-1123-3 Single, Pre-Biased... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;254mW/Input Resistor;10kΩ/Resistor Ratio;1/DC Current Gain;35


    35 100mA 254mW 50V SOT-1123-3 Single, Pre-Biased Bipolar Transistors RoHS

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