onsemi-Single, Pre-Biased Bipolar Transistors-NSBC144EDXV6T5G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;357mW/Operating Temperature;-55℃~+150℃/Input Resistor;47kΩ/Resistor Ratio;1/DC Current Gain;80


80 100mA 357mW 50V SOT-563-6 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;357mW/Operating Temperature;-55℃~+150℃/Input Resistor;47kΩ/Resistor Ratio;1/DC Current Gain;8080 100mA 357mW 50V SOT-563-6 Single,... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;357mW/Operating Temperature;-55℃~+150℃/Input Resistor;47kΩ/Resistor Ratio;1/DC Current Gain;80


    80 100mA 357mW 50V SOT-563-6 Single, Pre-Biased Bipolar Transistors RoHS

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