onsemi-Single, Pre-Biased Bipolar Transistors-NSVBC124EDXV6T1G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;500mW/Operating Temperature;-55℃~+150℃/Input Resistor;22kΩ/Resistor Ratio;1/DC Current Gain;60


60 100mA 500mW 50V SOT-563 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;500mW/Operating Temperature;-55℃~+150℃/Input Resistor;22kΩ/Resistor Ratio;1/DC Current Gain;6060 100mA 500mW 50V SOT-563 Single,... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;500mW/Operating Temperature;-55℃~+150℃/Input Resistor;22kΩ/Resistor Ratio;1/DC Current Gain;60


    60 100mA 500mW 50V SOT-563 Single, Pre-Biased Bipolar Transistors RoHS

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