onsemi-Single, Pre-Biased Bipolar Transistors-NSVMMUN2131LT1G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/Operating Temperature;-55℃~+150℃/Input Resistor;2.9kΩ/Resistor Ratio;1.2/DC Current Gain;8


8 100mA 246mW 50V SOT-23-3(TO-236-3) Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/Operating Temperature;-55℃~+150℃/Input Resistor;2.9kΩ/Resistor Ratio;1.2/DC Current Gain;88 100mA 246mW 50V SOT-23-3(TO-236-3) Single,... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/Operating Temperature;-55℃~+150℃/Input Resistor;2.9kΩ/Resistor Ratio;1.2/DC Current Gain;8


    8 100mA 246mW 50V SOT-23-3(TO-236-3) Single, Pre-Biased Bipolar Transistors RoHS

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