onsemi-Single, Pre-Biased Bipolar Transistors-NSVMMUN2135LT1G

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;400mW/Input Resistor;2.2kΩ/Resistor Ratio;0.047/DC Current Gain;80


80 100mA 400mW 50V SOT-23-3 Single, Pre-Biased Bipolar Transistors RoHS

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;400mW/Input Resistor;2.2kΩ/Resistor Ratio;0.047/DC Current Gain;8080 100mA 400mW 50V SOT-23-3 Single, Pre-Biased... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;400mW/Input Resistor;2.2kΩ/Resistor Ratio;0.047/DC Current Gain;80


    80 100mA 400mW 50V SOT-23-3 Single, Pre-Biased Bipolar Transistors RoHS

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