onsemi-Single, Pre-Biased Bipolar Transistors-NSVMMUN2230LT1G

Description

Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Output Voltage(VO(on));200mV/Input Resistor;1kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC Current Gain;3


Pre-Biased Bipolar Transistor (BJT) 50V 100mA 246mW Surface Mount SOT-23-3

Product form

Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Output Voltage(VO(on));200mV/Input Resistor;1kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC... Read more

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    Description

    Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Output Voltage(VO(on));200mV/Input Resistor;1kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC Current Gain;3


    Pre-Biased Bipolar Transistor (BJT) 50V 100mA 246mW Surface Mount SOT-23-3

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