onsemi-Single, Pre-Biased Bipolar Transistors-NSVMMUN2231LT1G

Description

Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Input Resistor;2.2kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC Current Gain;8


8 100mA 1 NPN (Pre-Biased) 246mW 50V SOT-23-3 Single, Pre-Biased Bipolar Transistors RoHS

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Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Input Resistor;2.2kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC Current... Read more

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    Description

    Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Input Resistor;2.2kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC Current Gain;8


    8 100mA 1 NPN (Pre-Biased) 246mW 50V SOT-23-3 Single, Pre-Biased Bipolar Transistors RoHS

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