OPTEK-Phototransistors-OP550B

Description

/Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-40℃~+100℃/Current - Collector(Ic);4.7mA/Pd - Power Dissipation;100mW/Peak Wavelength;935nm


4.7mA 30V 935nm 100nA Through Hole Phototransistors RoHS

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/Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-40℃~+100℃/Current - Collector(Ic);4.7mA/Pd - Power Dissipation;100mW/Peak Wavelength;935nm4.7mA 30V 935nm 100nA Through Hole Phototransistors RoHS Read more

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    Description

    /Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-40℃~+100℃/Current - Collector(Ic);4.7mA/Pd - Power Dissipation;100mW/Peak Wavelength;935nm


    4.7mA 30V 935nm 100nA Through Hole Phototransistors RoHS

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