ORIENTAL SEMI-Single FETs, MOSFETs-OSG60R180FF

Description

Drain to Source Voltage;650V/Gate Charge(Qg);23.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.94pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.44nF


650V 20A Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);23.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.94pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);23.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.94pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.44nF


    650V 20A Through Hole TO-220F

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