ORIENTAL SEMI-Single FETs, MOSFETs-OSG60R180FSF

Description

Drain to Source Voltage;600V/Gate Charge(Qg);35.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.3pF/Gate Threshold Voltage (Vgs(th));3.9V


600V 180mΩ@10V 1 N-channel 34W TO-220F-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);35.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.3pF/Gate Threshold Voltage (Vgs(th));3.9V600V 180mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);35.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);180mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.3pF/Gate Threshold Voltage (Vgs(th));3.9V


    600V 180mΩ@10V 1 N-channel 34W TO-220F-3 Single FETs, MOSFETs RoHS

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