orisilicon-Single FETs, MOSFETs-OSM002

Description

Drain to Source Voltage;15V/Gate Charge(Qg);30nC@4V/Number;2 N-Channel/Type;N-Channel/RDS(on);2.9mΩ@4.5V/Operating Temperature -;-40℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);430pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));950mV/Output Capacitance(Coss);480pF


N-Channel 15V 20A Surface Mount PLDFN-4(2.5x3.5)

Product form

Drain to Source Voltage;15V/Gate Charge(Qg);30nC@4V/Number;2 N-Channel/Type;N-Channel/RDS(on);2.9mΩ@4.5V/Operating Temperature -;-40℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);430pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));950mV/Output Capacitance(Coss);480pFN-Channel 15V 20A... Read more

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    Description

    Drain to Source Voltage;15V/Gate Charge(Qg);30nC@4V/Number;2 N-Channel/Type;N-Channel/RDS(on);2.9mΩ@4.5V/Operating Temperature -;-40℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);430pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));950mV/Output Capacitance(Coss);480pF


    N-Channel 15V 20A Surface Mount PLDFN-4(2.5x3.5)

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