orisilicon-Single FETs, MOSFETs-OSM7N65A

Description

Drain to Source Voltage;650V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);1.4Ω@10V/Operating Temperature -;-40℃~+85℃/Reverse Transfer Capacitance (Crss@Vds);5.5pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.13nF/Output Capacitance(Coss);93pF


N-Channel 650V 7A Surface Mount TO-263

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);1.4Ω@10V/Operating Temperature -;-40℃~+85℃/Reverse Transfer Capacitance (Crss@Vds);5.5pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.13nF/Output Capacitance(Coss);93pFN-Channel 650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);1.4Ω@10V/Operating Temperature -;-40℃~+85℃/Reverse Transfer Capacitance (Crss@Vds);5.5pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.13nF/Output Capacitance(Coss);93pF


    N-Channel 650V 7A Surface Mount TO-263

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