OSEN-Single FETs, MOSFETs-IRF640NPBF

Description

Drain to Source Voltage;200V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);120mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.1nF/Output Capacitance(Coss);180pF


N-Channel 200V 18A 125W Through Hole TO-220AB

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);120mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.1nF/Output Capacitance(Coss);180pFN-Channel... Read more

$4.62 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);120mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.1nF/Output Capacitance(Coss);180pF


    N-Channel 200V 18A 125W Through Hole TO-220AB

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