OSEN-Single FETs, MOSFETs-IRFP064N

Description

Drain to Source Voltage;55V/Gate Charge(Qg);77nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);7mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);480pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4nF/Output Capacitance(Coss);1.3nF


N-Channel 55V 110A 200W Through Hole TO-247S

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);77nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);7mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);480pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4nF/Output Capacitance(Coss);1.3nFN-Channel... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);77nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);7mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);480pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4nF/Output Capacitance(Coss);1.3nF


    N-Channel 55V 110A 200W Through Hole TO-247S

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