OSEN-Single FETs, MOSFETs-IXFH100N25P-OSEN

Description

Drain to Source Voltage;250V/Gate Charge(Qg);198nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;600W/RDS(on);27mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;8.5nF/Output Capacitance(Coss);1.17nF


250V 27mΩ@10V 1 N-channel 600W TO-247H Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);198nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;600W/RDS(on);27mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;8.5nF/Output Capacitance(Coss);1.17nF250V... Read more

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);198nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;600W/RDS(on);27mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;8.5nF/Output Capacitance(Coss);1.17nF


    250V 27mΩ@10V 1 N-channel 600W TO-247H Single FETs, MOSFETs RoHS

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