OSEN-Single FETs, MOSFETs-IXFH24N90P-OSEN

Description

Drain to Source Voltage;900V/Gate Charge(Qg);135nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;660W/RDS(on);337mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);67pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;6.6nF/Output Capacitance(Coss);500pF


900V 337mΩ@10V 1 N-channel 660W TO-247H Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);135nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;660W/RDS(on);337mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);67pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;6.6nF/Output Capacitance(Coss);500pF900V... Read more

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);135nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;660W/RDS(on);337mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);67pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;6.6nF/Output Capacitance(Coss);500pF


    900V 337mΩ@10V 1 N-channel 660W TO-247H Single FETs, MOSFETs RoHS

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