OSEN-Single FETs, MOSFETs-OSH13N90

Description

Drain to Source Voltage;900V/Gate Charge(Qg);124nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);650mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);98pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;4.23nF/Output Capacitance(Coss);318pF


900V 650mΩ@10V 1 N-channel 300W TO-247G Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);124nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);650mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);98pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;4.23nF/Output Capacitance(Coss);318pF900V... Read more

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);124nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);650mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);98pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;4.23nF/Output Capacitance(Coss);318pF


    900V 650mΩ@10V 1 N-channel 300W TO-247G Single FETs, MOSFETs RoHS

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