OSEN-Single FETs, MOSFETs-OSH4N150

Description

Drain to Source Voltage;1.5kV/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);3.95Ω@10V/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);120pF


1.5kV 3.95Ω@10V 1 N-channel 160W TO-247S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;1.5kV/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);3.95Ω@10V/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);120pF1.5kV... Read more

$3.60 Excl. VAT

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    Description

    Drain to Source Voltage;1.5kV/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);3.95Ω@10V/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);120pF


    1.5kV 3.95Ω@10V 1 N-channel 160W TO-247S Single FETs, MOSFETs RoHS

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